Samsung's 4GB Flash Memory

Samsung Electronics Co. has begun mass-producing 4-Gigabit (Gb) NAND
flash memory using 70-nanometer micro-processing technology for the
first time in the world. This is an upgrade from 90-nanometer design and
this technology will allow Samsung to offer products with larger storage
densities at more affordable prices.

The 70nm 4Gb NAND writes data at 16-megabytes per second, 50% faster
than 2Gb NAND built on 90-nanometer technology. A memory card made
up of 16 of these chips allows real-time storage of eight hours of high
definition video images.

The 4Gb NAND flash -- which has the highest density in the market --
uses SLC (single level cells) measuring 0.025 square micrometers, the
smallest in the business and 1/314,000 of a grown person’s hair, which
store a single data per cell.

The global market for NAND flash memory this year is estimated at $8
billion, with 4 Gigabit products accounting for 30 percent of sales.
Samsung has led the NAND flash memory market since 2002. Last year,
the company accounted for 54% of global sales.

Samsung has also announced a replacement for the current hard disk
solutions. The SDD system is based on a 2.5 inch structure with 16
NAND Flash memory modules with capacities of 4 or 8 GB of memory.
At the end of this year, Samsung will also propose a SDD solution of 1.8
inch which will offer the same storing capacity.