Intel's 45nm SRAM

Today Intel announced that it has become the first company to reach an important milestone in the development of 45 nanometer (nm) logic technology. Intel has produced what are believed to be the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next-generation, high-volume semiconductor manufacturing process. Achieving this milestone means Intel is on track to manufacture chips with this technology in 2007 using 300mm wafers, and continues the company's focus on pushing the limits of Moore's Law, by introducing a new process generation every two years.

Currently, Intel leads the industry in volume production of semiconductors using 65nm process technology. The 45nm SRAM chip has more than 1 billion transistors. It will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience. Intel's 45nm process technology will allow chips with more than five times less leakage power than those made today. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms.

Intel said that this 45 nm SRAM chip is a key first step in the march toward high-volume manufacturing of the world's most complex devices. Intel also plans a low-power derivative of the 65-nm manufacturing process for handheld chips and chipsets. Additional information about this topic is available at www.intel.com/pressroom . You may also listen to a recorded interview with Intel senior fellow Mark Bohr by clicking the "Manufacturing" channel at http://intel.feedroom.com/.